Antimony segregation at copper/manganese-oxide interfaces studied with analytical transmission electron microscopy

Electron Gases at Oxide Interfaces

1027 Abstract Two-dimensional electron gases (2DEGs) based on conventional semiconductors such as Si or GaAs have played a pivotal role in fundamental science and technology. The high mobilities achieved in 2DEGs enabled the discovery of the integer and fractional quantum Hall effects and are exploited in high-electron-mobility transistors. Recent work has shown that 2DEGs can also exist at oxi...

Two dimensional electron gas at oxide interfaces

Hot-electron effects and oxide degradation in MOS structures studied with ballistic electron emission microscopy

The application of the STM-based technique of ballistic electron emission microscopy (BEEM) to the study of transport properties of SiO2 gate oxide layers is reviewed. Oxide degradation observed on a local scale of nanometer dimensions ranges from the filling of electron traps with low-kinetic-energy electrons injected just above the oxide barrier, to trap generation and filling triggered by el...

Transmission Electron Microscopy at Atmospheric Pressure

The ability to monitor dynamic processes in-situ is crucial for understanding structure-property relationships in nano-engineered materials. In the past decade, the majority of atomic-scale electron microscopy studies involving gas-solid interactions were conducted in an environmental transmission electron microscope (ETEM), where the gas pressure is typically limited to no more than 1/100 of a...

Scanning transmission electron microscopy at high resolution.

We have shown that a scanning transmission electron microscope with a high brightness field emission source is capable of obtaining better than 3 A resolution using 30 to 40 keV electrons. Elastic dark field images of single atoms of uranium and mercury are shown which demonstrate this fact as determined by a modified Rayleigh criterion. Point-to-point micrograph resolution between 2.5 and 3.0 ...